stp-survey, April 16, 2003
bstumpp <[email protected]> Wed, 16 Apr 2003 16:00:02 +0200
| Newsgroups | gmane.technology.stp |
|---|---|
| Message-ID | <[email protected]> |
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stp-survey
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Content
Patented epitaxy process for fewer displacements in GaN substrates -
Patentierter Epitaxie-Prozess für weniger Versetzungen in GaN-Substraten
Transistor based on randomly distributed carbon nanotubes - Transistor
auf Basis zufallsverteilter Kohlenstoff-Nanotubes
Highly reproducible production of silver nanodots - Hochreproduzierbare
Herstellung von silbernen Nanodots
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Patented epitaxy process for fewer displacements in GaN substrates
American scientists have developed a process for the growth of GaN on
specially structured sapphire substrates.
http://www.stp-gateway.de/News/news690-e.html
Patentierter Epitaxie-Prozess für weniger Versetzungen in GaN-Substraten
Amerikanische Wissenschaftler haben einen Prozess zum Wachsen von GaN
auf speziell strukturierten Saphir-Substraten entwickelt.
http://www.stp-gateway.de/News/news690.html
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Transistor based on randomly distributed carbon nanotubes
Up to now, it has been generally accepted that the nanotubes had to be
precisely arranged in the case of electronic components......
http://www.stp-gateway.de/News/news689-e.html
Transistor auf Basis zufallsverteilter Kohlenstoff-Nanotubes
Bis jetzt dachten viele, dass bei elektronischen Komponenten die
Nanotubes präzise angeordnet sein müssten.
http://www.stp-gateway.de/News/news689.html
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Highly reproducible production of silver nanodots
Japanese researchers produced silver nanodots and nanowires with the aid
of the tip of an STM.
http://www.stp-gateway.de/News/news688-e.html
Hochreproduzierbare Herstellung von silbernen Nanodots
Japanische Forscher stellten mit Hilfe der Spitze eines STM silberne
Nanodots und Nanodrähte her.
http://www.stp-gateway.de/News/news688.html
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